Characteristics Analysis of Contrast Transfer Images Based on Optoelectronic Integrators

Document Type : Original Article

Authors

1 Engineering Department, NRC, Atomic Energy Authority, P. No. 13759, Inshas, Egypt

2 Department on Engineering, Nuclear Research Center, Egyptian Atomic Energy Authority

3 Engineering and Scientific Instruments, Nuclear Research Center, EAEA, Egypt

Abstract

The present study is concerned with overcoming the resultant image degradation due to the integration of the optoelectronics instruments (OEIDs). Accordingly, the characteristics of the image, due to optoelectronic integration, are handled and improved. The image features include the transmission mechanism and the concentration of electrons. The device performance is improved through the optimal design of the basic parameters. Furthermore, the efficient design of structure parameters will minimize the reabsorption process. Optimization of the integrator structure is realized. MATLAB environment is used for devising this instrument. The optimal number of integrator base and wave number characterizing the scale of near-infrared (NIR) image nonuniformity are estimated to be 13 and 0.206 respectively. The output of this instrument is also conducted through closed-form expressions of the underlined instrument. The achieved results show a remarkable accuracy for handling the deformations raised during the integration process. In addition, the results show that the carrier concentration changes the behavior of the output of the NIR image.

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